Facile synthesis of nickel cobaltite quasi-hexagonal nanosheets for multilevel resistive switching and synaptic learning applications

Abstract High-density memory devices are essential to sustain growth in information technology (IT). Furthermore, brain-inspired computing the future of IT businesses such as artificial intelligence, deep learning, and big data. Herein, we propose a facile hierarchical nickel cobaltite (NCO) quasi-hexagonal nanosheet-based memristive device for multilevel resistive switching (RS) synaptic learning applications. Electrical measurements Pt/NCO/Pt show electroforming free pinched hysteresis loops at different voltages, suggesting RS capability device. The detailed properties were calculated using time-dependent current–voltage two-valued charge-flux indicate characteristics Interestingly, shows compliance current (CC)-dependent property; compliance-free was observed from 10 −2 −4 A, effect dominated range −5 –10 −6 A. In CC control mode, demonstrated three resistance states during endurance retention measurements. addition, successful mimicking biological potentiation-depression- spike-timing-dependent plasticity rules. results present investigation that solution-processable NCO nanosheets potential materials high-density